NEP硫化铅探测器PbS detector
NEP硒化铅探测器PbSe
detector
NEP铟镓砷探测器InGaAs detector
美国NEP硫化铅探测器
创建于1973年的美国NEW
ENGLAND
PHOTOCONDUCTOR(NEP),专注于硫化铅，硒化铅，铟镓砷红外探测器的生产，产品用于红外分析领域。
硫化铅探测器，主要有如下产品，
1. 室温硫化铅系列A-B-C&AM-BM-CM系列
2. 电制冷硫化铅系列D-D2-D21系列
3.
双色探测器PbS-Si,硫化铅，硅双色探测器，用于火焰探测
见文档NEP-PBS.PDF，同时提供，前置放大器和制冷控制器，用于探测器。
典型应用：
气体分析：医学的，工业的
火焰探测器，锅炉控制
温度测量，湿度测量
光谱学
过程控制系统
热成像
火焰监测与检测
美国NEP硫化铅探测器
创建于1973年的美国NEW
ENGLAND
PHOTOCONDUCTOR(NEP),专注于硫化铅，硒化铅，铟镓砷红外探测器的生产，产品用于红外分析领域。
硒化铅探测器，主要有如下产品
1.室温硒化铅系列F-FA-FS&FM-FAM-FSM系列
2.电制冷硒化铅系列G-G2-G21-GS21系列
3.双色探测器PbSE-Si,硒化铅，硅双色探测器
4.单通道，双通道，四通道带窄带滤光片硒化铅气体探测器，比如CO2单通道硒化铅探测器，双通道CO2硒化铅探测器，双通道酒精气体探测器，双通道CO气体探测器
,四通道气体探测器
见文档NEP-PBSE.PDF，同时提供，前置放大器和制冷控制器，用于探测器。
典型应用：
典型应用：
气体分析-CO,CO2,HC 医学的，工业的
排放监测
光谱学
过程控制系统
热成像
防卫与安全
美国NEP硫化铅探测器
创建于1973年的美国NEW
ENGLAND PHOTOCONDUCTOR(NEP),专注于硫化铅，硒化铅，铟镓砷红外探测器的生产，产品用于红外分析领域。
铟镓砷探测器，主要有4个系列，
1.是室温铟镓砷系列I系列，激活面积从50um到5mm
2.是电制冷铟镓砷系列IC1和IC2系列
3.是扩展铟镓砷探测器，包括室温IE6系列，一级制冷IE6C1系列,二级制冷IE6C2系列
4.铟镓砷探测器模块AP300-T2
见文档NEP-InGaAs.PDF，同时提供，前置放大器和制冷控制器，用于探测器。 红外光敏电阻系列产品
美国NEP专业生产各种规格高品质硫化铅,硒化铅,铟镓砷红外探测器,广泛用于以下产品:
-
火焰探测器，锅炉控制等
-
气体分析仪，包括工业气体、汽车尾气等
-
湿度分析仪
-
红外温度测量
-
光谱仪
-
蛋白质成分分析仪
我们提供以下产品:
-
硫化铅红外光敏电阻系列 (PbS)
-
电子冷却硫化铅红外光敏电阻系列 (TEC PbS)
-
硫化铅红外线阵探测器 (PbS Linear Array)
-
硒化铅红外光敏电阻 (PbSe)
-
电子冷却硒化铅红外光敏电阻 (TEC PbSe)
-
硒化铅红外线阵探测器 (PbSe Linear Array)
-
铟镓砷InGaAs PIN光电二极管近红外探测器
选购这些探测器时请同时参考最先进的MEMS脉冲红外光源.
相应曲线：
硫化铅：
硒化铅：
1. 硫化铅光敏电阻系列:
电气参数
| Test Conditions at 25°C -
Typical |
A & AM |
B & BM |
C & CM |
| D* (Pk.,600,1) x 1011 |
.5-1.2 |
.5-1.2 |
.5-1.2 |
| Wavelength Cut-off - Microns |
3.0 |
3.0 |
2.7 |
| Peak Wavelength Response - Microns |
2.5 |
2.5 |
2.2 |
| Time Constant - Microseconds |
<100 |
100-300 |
>300 |
| Resistance - Megohms |
.2-2.0 |
.2-2.0 |
.5-10 |
注:型号中的M为密封封装.
活性区参数
Code
Number |
Active Area |
Bias Voltage |
Typical VW-1
Responsivity |
Package
Size |
| Inches |
mm |
Typical |
Maximum |
| .25 |
.010 |
.25 |
10 |
20 |
1.0x106 |
TO-5 & TO-46 |
| .5 |
.020 |
.5 |
20 |
40 |
6.0x105 |
TO-5 & TO-46 |
| 1 |
.040 |
1 |
50 |
100 |
3.0x105 |
TO-5 & TO-46 |
| 2 |
.080 |
2 |
100 |
200 |
1.5x105 |
TO-5 |
| 3 |
.120 |
3 |
150 |
300 |
1.0x105 |
TO-5 |
| 5 |
.200 |
5 |
250 |
500 |
6.0x104 |
TO-8 |
| 10 |
.400 |
10 |
500 |
1000 |
3.0x104 |
TO-3 |
机械参数
典型应用电路:
2. 电子冷却硫化铅光敏电阻系列
电气参数
| Test Conditions at 25° C
-Typical |
D |
D2 |
D21** |
| D* (Pk.,600,1) x 1011 |
1.5 |
2.5 |
2.8 |
| Wavelength Cut-off - Microns |
3.1 |
3.2 |
3.3 |
| Peak Wavelength Response - Microns |
2.5 |
2.5 |
2.5 |
| Time Constant - Milliseconds |
1-2.5 |
1-2.5 |
1-2.5 |
| Resistance - Megohms |
.5-10 |
.5-10 |
.5- 5 |
| Operating Temperature - °C |
-20 |
-30 |
-45 |
| Cooler Power - Volts DC/Amps |
.8V/1.8A |
.8V/1.4A |
2.0V/1.4A |
NOTE: 3-6 Stage
Thermoelectric Coolers and Vacuum LN Dewars also
available. Contact us for further details.
**TO-8, TO-66 or TO-3 packages only.
活性区参数
Code
Number |
Active Area |
Bias Voltage |
Typical VW-1X105
Responsivity |
Package
Size |
| Inches |
mm |
Typical |
Maximum |
-20 |
-30 |
-45 |
| 1 |
.040 |
1 |
50 |
100 |
6.0 |
9.0 |
13.0 |
TO-5-37-8-66 |
| 2 |
.080 |
2 |
100 |
200 |
3.0 |
4.5 |
6.5 |
TO-5-37-8-66 |
| 3 |
.120 |
3 |
150 |
300 |
2.5 |
3.5 |
4.5 |
TO-5-37-8-66 |
| 5 |
.200 |
5 |
250 |
500 |
1.2 |
2.0 |
3.0 |
TO-8-66 |
| 10 |
.400 |
10 |
500 |
1000 |
.6 |
1.0 |
1.5 |
TO-3 |
机械参数
3. 硫化铅线阵，参考价格每套$528。
主要性能:
Array
- PbS Array 1-3 microns
- PbSe Array 1-5 microns
- PbS D* >8 x 1010 Note
- PbSe D* >3 x 109 Note
- Square or rectangular geometry
- Pitch down to 59 microns
- Pixels 256
- Thermoelectrically cooled
- TE Cooler Controller
- Operating temp. down to 253K
- Optical filters
- Low cost
- Custom designs
|
 |
Multiplexing
- DC integrating
- Dark current subtraction
- Sample rates from 100 Hz to 1.2 MHz
- Independent or slave operation
- Custom interfaces available
- Integration times from 0.05 msec to
0.66 sec.
|
System Requirements
- ±12 to ±15VDC
- TE Cooler 5V @ 2 amps (typical)
Amplifier
Specifications
- Output voltage range up to ±12V
- Output current 2-3 mAmp typical
and up to 30 mAmp available
- Adjustable output gain available
|
4. 硒化铅光敏电阻
电气参数
| Test Conditions at 25°C -
Typical |
F & FM |
FA & FAM |
FS & FSM |
| D* (Pk.,1000,1) x 109 |
1.0 - 3.0 |
3.0 - 6.0 |
>6.0 |
| Wavelength Cut-off - Microns |
4.5 - 5.0 |
4.5 - 5.0 |
4.5 - 5.0 |
| Peak Wavelength Response - Microns |
3.8 - 4.3 |
3.8 - 4.3 |
3.8 - 4.3 |
| Time Constant - Microseconds |
1 - 3 |
1 - 3 |
1 - 3 |
| Resistance - Megohms |
.1 - 4 |
.1 - 4 |
.1 - 4 |
活性区参数
Code
Number |
Active Area |
Bias Voltage |
Typical VW-1 |
Package
Size |
| Inches |
mm |
Typical |
Maximum |
| 1 |
.040 |
1 |
50 |
100 |
6,000 |
TO-5 & TO-46 |
| 2 |
.080 |
2 |
100 |
200 |
3,000 |
TO-5 |
| 3 |
.120 |
3 |
150 |
300 |
2,000 |
TO-5 |
| 5 |
.200 |
5 |
250 |
500 |
1,200 |
TO-8 |
| 10 |
.400 |
10 |
500 |
1000 |
600 |
TO-3 |
机械参数
5. 电子冷却硒化铅光敏电阻
电气参数
| Test Conditions at 25° C |
G |
G2 |
G21** |
GS21** |
| D* (Pk.,1000,1) x 1010 |
.7 |
1.2 |
1.5 |
2.0 |
| Wavelength Cut-off - Microns |
5.2 |
5.3 |
5.4 |
5.4 |
| Peak Wavelength Response - Microns |
4.3 |
4.5 |
4.6 |
4.6 |
| Time Constant - Micro Seconds |
10 |
15 |
20 |
20 |
| Resistance - Megohms |
.2 - 7 |
.2 - 10 |
.2 - 15 |
.2 - 15 |
| Operating Temperature - °C |
-20 |
-30 |
-45 |
-45 |
| Cooler Power |
1.2V/1.8A |
1.3V/1.6A |
2.2V/1.2A |
2.2V/1.2A |
NOTE: 3-6 Stage
Thermoelectric Coolers and LN2 Dewars
available. Please contact us for further details.
**TO-8, TO-66 and TO-3 packages only.
活性区参数
|
Code
Number |
Active Area |
Bias Voltage |
Typical VW-1
Responsivity |
Package
Size |
| Inches |
mm |
Typical |
Maximum |
-20 |
-30 |
-45 |
| 1 |
.040 |
1 |
50 |
100 |
9000 |
13000 |
16000 |
TO-5-37-8-66 |
| 2 |
.080 |
2 |
100 |
200 |
5000 |
8000 |
11000 |
TO-5-37-8-66 |
| 3 |
.120 |
3 |
150 |
300 |
3000 |
5000 |
6500 |
TO-5-37-8-66 |
| 5 |
.200 |
5 |
250 |
500 |
2000 |
3000 |
3500 |
TO-8-66 |
| 10 |
.400 |
10 |
500 |
1000 |
1000 |
1500 |
1800 |
TO-3 |
机械参数
6. 硒化铅线阵，参考价格每套$528。
主要性能:
Array
- PbS Array 1-3 microns
- PbSe Array 1-5 microns
- PbS D* >8 x 1010 Note
- PbSe D* >3 x 109 Note
- Square or rectangular geometry
- Pitch down to 59 microns
- Pixels 256
- Thermoelectrically cooled
- TE Cooler Controller
- Operating temp. down to 253K
- Optical filters
- Low cost
- Custom designs
|
 |
Multiplexing
- DC integrating
- Dark current subtraction
- Sample rates from 100 Hz to 1.2 MHz
- Independent or slave operation
- Custom interfaces available
- Integration times from 0.05 msec to
0.66 sec.
|
System Requirements
- ±12 to ±15VDC
- TE Cooler 5V @ 2 amps (typical)
Amplifier
Specifications
- Output voltage range up to ±12V
- Output current 2-3 mAmp typical
and up to 30 mAmp available
- Adjustable output gain available
|
Note: These D* values are for
unmultiplexed arrays. D* is affected by sample
rates, integration times, etc.
7. InGaAs PIN光电二极管探测器
|
InGaAs PIN
Photodiode Detectors RT 非致冷型
|
主要性能:
- 低暗电流,低电容,高响应.
- Mesa 结构, 无信号时不导电.
- 适合于DC - 3GHz, 以及光纤应用.
|
| Part # |
Diameter mm |
Resp. A/W @1.3μm |
Resp. A/W @1.55μm |
Dark Current nA |
Cutoff Freq. MHz |
Cap. pf |
Shunt Res. MΩ |
Peak D* cm*Hz½/W |
NEP W/Hz½ |
| I5-.04-46 |
.040 |
.85 |
.90 |
.075 |
3000 |
.6 |
9000 |
>1012 |
<10-14 |
| I5-.08-46 |
.080 |
.85 |
.90 |
.10 |
2200 |
.9 |
7000 |
>1012 |
<10-14 |
| I5-.1-46 |
.100 |
.85 |
.90 |
.15 |
2000 |
1 |
6000 |
>1012 |
<10-14 |
| I5-.3-46 |
.300 |
.85 |
.90 |
.4 |
350 |
5 |
900 |
>1012 |
<10-14 |
| I5-.5-46 |
.500 |
.85 |
.90 |
.7 |
200 |
10 |
250 |
>1012 |
<10-13 |
| I5-1-46 |
1.00 |
.85 |
.90 |
2 |
30 |
100 |
90 |
>1012 |
<10-13 |
| I5-2-5 |
2.00 |
.85 |
.90 |
8 |
3 |
600 |
20 |
>1012 |
<10-13 |
| I5-3-5 |
3.00 |
.85 |
.90 |
20 |
1.75 |
1200 |
9 |
>1012 |
<10-13 |
| I5-5-8 |
5.00 |
.85 |
.90 |
30 |
.5 |
4000 |
2 |
>1012 |
<10-12 |
| I5-10-3 |
10.00 |
.85 |
.90 |
100 |
.15 |
14000 |
.5 |
>1012 |
<10-12 |
|
传感器/变送器/仪表按厂商品牌选用指南
红外光电系列
