UV PHOTODIODES

Silicon Carbide UV Photodiodes
UV-photodiodes based on SiC (Silicon Carbide) provide the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise.
These SiC detectors can be permanently operated at up to 170°C
| SIC01D | Spectral range | Peak WL | Active Area | Package | Note | Data sheet | 
| SIC01D-18 | 215 - 365 nm | 285 nm | 0.5 mm² | TO-18 | UV broadband | / | 
| SIC01D-A18 | 310 - 370 nm | 335 nm | 0.5 mm² | TO-18 | UVA | / | 
| SIC01D-B18 | 230 - 315 nm | 280 nm | 0.5 mm² | TO-18 | UVB | / | 
| SIC01D-C18 | 230 - 285 nm | 270 nm | 0.5 mm² | TO-18 | UVC | / | 
| SIC01D-E18 | UVI | / | 0.5 mm² | TO-18 | DIN5050/CIE087 UV-Index measurement (Erythem) | / | 
| SIC01XL | Spectral range | Peak WL | Active Area | Package | Note | Data sheet | |||||||||||||||||||||||||||||||||||
| SIC01XL-5 | 220 - 360 nm | 280 nm | 4.0 mm² | TO-5 | UV broadband |   SIC01XL-5ISO90 | 220 - 360 nm | 280 nm | 4.0 mm² | TO-5 | UV broadband, 2 isolated pins, 1 
				ground pin | / | SIC01XL-A5 | 310 - 370 nm | 335 nm | 4.0 mm² | TO-5 | UVA only sensivity | / | SIC01XL-B5 | 230 - 315 nm | 280 nm | 4.0 mm² | TO-5 | UVB only sensivity | / | SIC01XL-C5 | 230 - 285 nm | 270 nm | 4.0 mm² | TO-5 | UVC only sensivity | / | SIC01XL-E5 | UVI | / | 4.0 mm² | TO-5 | DIN5050/CIE087 UV-Index 
				measurement (Erythem) | / |  | 

Silicon Carbide UV Photodiodes - multi chip array
UV photodiode array based on 4 parallel SiC detector chips for ultra low level UV radiation sensitivity
| Spectral range | Peak WL | Chip size | Package | Note | Data sheet | |
| SIC01L4-5 | 210 - 380 nm | 280 nm | 3.84 mm² | TO-5 | Id 20 fA, 800 pF | / | 
| SIC01L4-C5C | 230 - 285 nm | 270 nm | 3.84 mm² | TO-5 | Id 20 fA, 800 pF | / | 

Silicon Carbide UV Photodiodes with TIA
Silicon Carbide UV photodetector with integrated transimpendance amplifier in TO-5 metal can housing.
--> 0...5V stable output voltage
--> no external amplifier required
--> irradiance up to 18W/cm² and UVA,-B,-C versions available on request

Gallium Phosphide UV Photodiodes
UV photodiodes based on GaP

GaN, AlGaN and InGaN UV Photodiodes
UV-photodiodes based on GaN, AlGaN and InGaN are intrinsic visible blind due to high bandgap material, extreme irradiation hardness
GUVC and GUVB -> AlGaN , GUVA -> GaN , GUVV -> InGaN

GaN, AlGaN and InGaN UV Photodiodes with TIA
UV-photodiode based on GaN, AlGaN and InGaN with integrated transimpedance amplifier for ultra low level UV radiation detection
Wavelength of peak response: 280 nm, 320 nm, 370 nm, 395 nm
GUVC and GUVB -> AlGaN , GUVA -> GaN , GUVV -> InGaN
| Spectral range | Package | Note | Data sheet | ||||||||||||||||
| GUVC-T21GH | 220 - 280 nm | TO-5 | integrated TI amplifier, quartz window |   GUVB-T21GH | 220 - 320 nm | TO-5 | integrated TI amplifier, quartz 
				window | request | GUVA-T21GH | 220 - 370 nm | TO-5 | integrated TI amplifier, quartz 
				window | request | GUVV-T21GH | 220 - 395 nm | TO-5 | integrated TI amplifier, quartz 
				window |  |   | 

UV Sensor Modules GaN
UV Sensor Modules based on GaN
-> PHASE OUT
| Spectral range | Size | Note | Data sheet | |
| GUVA-T11GM-LA | 220 - 370 nm | 28 x 17 x 9 mm² | basic |   | 
AlGaN UV Photodiodes
UV photodiodes based on AlGaN
| Spectral range | Chip size | Package | Note | Data sheet | |
| AlGaN-UVB | 225 - 317 nm | 0.076 mm² | TO-18 | peak at 300 nm |   | 

TiO2 UV Photodiodes
UV photodiodes based on thin film TiO2 sensor technology
| Spectral range | Package | Note | Data sheet | ||||||
| UVD39 | 225 - 380 nm | TO-39 | peak at 300 nm, intrinsic visible blind |   TW30DZ | 253 - 361 nm | TO-46 | peak at 300 nm, intrinsic 
				visible blind |  |   | 


 
 
							










