Silicon Carbide UV Photodiodes
UV-photodiodes based on SiC (Silicon
Carbide) provide the unique property of extreme radiation hardness,
near-perfect visible blindness, low dark current, high speed and low
noise.
These SiC detectors can be permanently
operated at up to 170°C
| SIC01S |
Spectral range |
Peak WL |
Active Area |
Package |
Note |
Data sheet |
| SIC01S-18 |
215 - 365 nm |
285 nm |
0.06 mm² |
TO-18 |
UV broadband |
|
| SIC01S-18ISO90 |
215 - 365 nm |
285 nm |
0.06 mm² |
TO-18 |
UV broadband, 2 isolated pins, 1
ground pin |
|
| SIC01S-A18 |
310 - 370 nm |
335 nm |
0.06 mm² |
TO-18 |
UVA |
/ |
| SIC01S-B18 |
230 - 315 nm |
280 nm |
0.06 mm² |
TO-18 |
UVB |
/ |
| SIC01S-C18 |
230 - 285 nm |
270 nm |
0.06 mm² |
TO-18 |
UVC |
|
| SIC01M |
Spectral range |
Peak WL |
Active Area |
Package |
Note |
Data sheet |
| SIC01M-18 |
215 - 365 nm |
285 nm |
0.2 mm² |
TO-18 |
UV broadband |
|
| SIC01M-18ISO90 |
215 - 365 nm |
285 nm |
0.2 mm² |
TO-18 |
UV broadband, 2 isolated pins, 1
ground pin |
/ |
| SIC01M-5Lens |
220 - 360 nm |
285 nm |
0.2 mm² |
TO-5 |
UV broadband, flame detection |
|
| SIC01M-A18 |
310 - 370 nm |
335 nm |
0.2 mm² |
TO-18 |
UVA |
/ |
| SIC01M-B18 |
230 - 315 nm |
280 nm |
0.2 mm² |
TO-18 |
UVB |
/ |
| SIC01M-C5 |
230 - 285 nm |
270 nm |
0.2 mm² |
TO-5 |
UVC |
request |
| SIC01M-E18 |
UVI |
/ |
0.2 mm² |
TO-18 |
DIN5050/CIE087 UV-Index
measurement (Erythem) |
/ |
| SIC01D |
Spectral range |
Peak WL |
Active Area |
Package |
Note |
Data sheet |
| SIC01D-18 |
215 - 365 nm |
285 nm |
0.5 mm² |
TO-18 |
UV broadband |
/ |
| SIC01D-A18 |
310 - 370 nm |
335 nm |
0.5 mm² |
TO-18 |
UVA |
/ |
| SIC01D-B18 |
230 - 315 nm |
280 nm |
0.5 mm² |
TO-18 |
UVB |
/ |
| SIC01D-C18 |
230 - 285 nm |
270 nm |
0.5 mm² |
TO-18 |
UVC |
/ |
| SIC01D-E18 |
UVI |
/ |
0.5 mm² |
TO-18 |
DIN5050/CIE087 UV-Index
measurement (Erythem) |
/ |
| SIC01L |
Spectral range |
Peak WL |
Active Area |
Package |
Note |
Data sheet |
| SIC01L-18 |
215 - 365 nm |
285 nm |
1,0 mm² |
TO-18 |
UV broadband |
|
| SIC01L-18ISO90 |
215 - 365 nm |
285 nm |
1.0 mm² |
TO-18 |
UV broadband, 2 isolated pins, 1
ground pin |
/ |
| SIC01L-5 |
210 - 380 nm |
285 nm |
1,0 mm² |
TO-5 |
UV broadband |
|
| SIC01L-A5 |
310 - 370 nm |
335 nm |
1.0 mm² |
TO-5 |
UVA |
/ |
| SIC01L-B5 |
230 - 315 nm |
280 nm |
1.0 mm² |
TO-5 |
UVB |
/ |
| SIC01L-C5 |
230 - 285 nm |
270 nm |
1.0 mm² |
TO-5 |
UVC |
|
| SIC01L-E5 |
UVI |
/ |
1.0 mm² |
TO-5 |
DIN5050/CIE087 UV-Index
measurement (Erythem) |
/ |
| SIC01XL |
Spectral range |
Peak WL |
Active Area |
Package |
Note |
Data sheet |
| SIC01XL-5 |
220 - 360 nm |
280 nm |
4.0 mm² |
TO-5 |
UV broadband |
|
| SIC01XL-5ISO90 |
220 - 360 nm |
280 nm |
4.0 mm² |
TO-5 |
UV broadband, 2 isolated pins, 1
ground pin |
/ |
| SIC01XL-A5 |
310 - 370 nm |
335 nm |
4.0 mm² |
TO-5 |
UVA only sensivity |
/ |
| SIC01XL-B5 |
230 - 315 nm |
280 nm |
4.0 mm² |
TO-5 |
UVB only sensivity |
/ |
| SIC01XL-C5 |
230 - 285 nm |
270 nm |
4.0 mm² |
TO-5 |
UVC only sensivity |
/ |
| SIC01XL-E5 |
UVI |
/ |
4.0 mm² |
TO-5 |
DIN5050/CIE087 UV-Index
measurement (Erythem) |
/ |
Silicon Carbide UV Photodiodes - multi chip array
UV photodiode array based on 4 parallel
SiC detector chips for ultra low level UV radiation sensitivity
| |
Spectral range |
Peak WL |
Chip size |
Package |
Note |
Data sheet |
| SIC01L4-5 |
210 - 380 nm |
280 nm |
3.84 mm² |
TO-5 |
Id 20 fA, 800 pF |
/ |
| SIC01L4-C5C |
230 - 285 nm |
270 nm |
3.84 mm² |
TO-5 |
Id 20 fA, 800 pF |
/ |
Silicon Carbide UV Photodiodes with TIA
Silicon Carbide UV photodetector with
integrated transimpendance amplifier in TO-5 metal can housing.
--> 0...5V stable output voltage
--> no external amplifier required
--> irradiance up to 18W/cm² and
UVA,-B,-C versions available on request
| |
Spectral range |
Peak WL |
max. Irradiance |
Package |
Note |
Data sheet |
| UV-TIAMO-BL |
210 - 380 nm |
280 nm |
<18 nW / cm² |
TO-5 |
ball concentration lens, ->
flame detection |
|
| UV-TIAMO |
210 - 380 nm |
280 nm |
<18 µW / cm² |
TO-5 |
flat window with diffusor |
|
| UV-TIAMO-S |
210 - 380 nm |
280 nm |
<18 mW / cm² |
TO-5 |
flat window with diffusor |
|
| UV-TIAMO-M |
210 - 380 nm |
280 nm |
<180 mW / cm² |
TO-5 |
flat window with attenuator |
|
| UV-TIAMO-E2 |
UVI |
/ |
30 UVI |
TO-5 |
flat window, measuring of
UV-Index (DIN5050/CIE087) |
/ |
Gallium Phosphide UV Photodiodes
UV photodiodes based on GaP
| |
Spectral range |
Active Area |
Package |
Note |
Data sheet |
| EPD-150-0/2.5 |
130 - 550 nm |
4.8 mm² |
TO-39 |
sapphire window |
|
| EPD-150-0/3.6 |
130 - 550 nm |
10.9 mm² |
TO-39 |
sapphire window |
|
| EPD-440-0/0.9 |
190 - 550 nm |
0.51 mm² |
TO-46 |
|
|
| EPD-440-0/1.4 |
190 - 550 nm |
1.2 mm² |
TO-46 |
|
|
| EPD-440-0/2.5 |
190 - 550 nm |
4.8 mm² |
TO-39 |
|
|
| EPD-440-0/3.6 |
190 - 550 nm |
10.9 mm² |
TO-39 |
|
|
| EPD-280-0-0.3-1 |
220 - 380 nm |
0.056 mm² |
TO-46 |
|
request |
| EPD-270-0-0.3-2 |
230 - 285 nm |
0.056 mm² |
TO-39 |
|
request |
| EPD-365-0/0.9 |
245 - 405 nm |
0.51 mm² |
TO-46 |
UG11 filter |
|
| EPD-365-0/1.4 |
245 - 405 nm |
1.2 mm² |
TO-46 |
UG11 filter |
|
| EPD-365-0/2.5 |
245 - 405 nm |
4.8 mm² |
TO-39 |
UG11 filter |
|
| EPD-365-0/3.6 |
245 - 405 nm |
10.9 mm² |
TO-39 |
UG11 filter |
|
| EPD-310-0-0.3-2 |
290 - 330 nm |
0.056 mm² |
TO-39 |
|
request |
| EPD-360-0-0.3-2 |
230 - 400 nm |
0.056 mm² |
TO-39 |
|
request |
GaN, AlGaN and InGaN UV Photodiodes
UV-photodiodes based on GaN, AlGaN and
InGaN are intrinsic visible blind due to high bandgap material, extreme
irradiation hardness
GUVC and GUVB -> AlGaN , GUVA -> GaN ,
GUVV -> InGaN
|
Spectral range |
Chip size |
Package |
Note |
Data sheet |
| GUVC-T10GD |
210 - 280 nm |
0.16 mm² |
TO-46 |
quartz window |
|
| GUVB-T11GD |
200 - 320 nm |
0.16 mm² |
TO-46 |
quartz window |
request |
| GUVB-S11SD |
235 - 320 nm |
0.16 mm² |
SMD 3528 |
silicone window |
|
| GUVA-T11GD |
200 - 370 nm |
0.16 mm² |
TO-46 |
quartz window |
|
| GUVA-S12SD |
240 - 370 nm |
0.16 mm² |
SMD 3528 |
silicone window |
|
| GUVA-S22ED |
290 - 370 nm |
0.16 mm² |
SMD 1608 |
silicone/epoxy window |
|
| GUVA-C22ED |
240 - 370 nm |
0.16 mm² |
COB 2418 |
Si encapsulant |
request |
| GUVV-T10GD |
230 - 395 nm |
0.16 mm² |
TO-46 |
quartz window |
|
| GUVV-S10SD |
240 - 395 nm |
0.16 mm² |
SMD 3528 |
silicone/epoxy window |
request |
GaN, AlGaN and InGaN UV Photodiodes with TIA
UV-photodiode based on GaN, AlGaN and
InGaN with integrated transimpedance amplifier for ultra low level UV
radiation detection
Wavelength of peak response: 280 nm,
320 nm, 370 nm, 395 nm
GUVC and GUVB -> AlGaN , GUVA -> GaN ,
GUVV -> InGaN
|
Spectral range |
Package |
Note |
Data sheet |
| GUVC-T21GH |
220 - 280 nm |
TO-5 |
integrated TI amplifier, quartz
window |
|
| GUVB-T21GH |
220 - 320 nm |
TO-5 |
integrated TI amplifier, quartz
window |
request |
| GUVA-T21GH |
220 - 370 nm |
TO-5 |
integrated TI amplifier, quartz
window |
request |
| GUVV-T21GH |
220 - 395 nm |
TO-5 |
integrated TI amplifier, quartz
window |
|
UV Sensor Modules GaN
UV Sensor Modules based on GaN
-> PHASE OUT
|
Spectral range |
Size |
Note |
Data sheet |
| GUVA-T11GM-LA |
220 - 370 nm |
28 x 17 x 9 mm² |
basic |
|
AlGaN UV Photodiodes
UV photodiodes based on AlGaN
| |
Spectral range |
Chip size |
Package |
Note |
Data sheet |
| AlGaN-UVB |
225 - 317 nm |
0.076 mm² |
TO-18 |
peak at 300 nm |
|
TiO2 UV Photodiodes
UV photodiodes based on thin film TiO2
sensor technology
| |
Spectral range |
Package |
Note |
Data sheet |
| UVD39 |
225 - 380 nm |
TO-39 |
peak at 300 nm, intrinsic
visible blind |
|
| TW30DZ |
253 - 361 nm |
TO-46 |
peak at 300 nm, intrinsic
visible blind |
|
紫外线光度计 紫外光度计 UV光度计 紫外线传感器 紫外探测器紫外光强检测计 紫外光强检测
紫外光能量计 UV强度计UV能量计 紫外线辐照计 紫外线能量计 紫外光能量计 紫外线显示器
红外光电系列
火焰传感器/紫外线传感器/紫外线光敏管/紫外传感器/火焰探测器
